IRF7811WGTRPBF
MOSFET N-CH 30V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7811WGTRPBF. This surface-mount device features a 30V drain-source breakdown voltage and a continuous drain current rating of 14A at 25°C ambient. The Rds(on) is specified at a maximum of 12mOhm at 15A and 4.5V Vgs. Key parameters include a gate charge (Qg) of 33nC at 5V Vgs and an input capacitance (Ciss) of 2335pF at 16V Vds. Designed for demanding applications, this MOSFET operates within an ambient temperature range of -55°C to 150°C. The 8-SOIC package, supplied on tape and reel, is suitable for high-volume manufacturing. Its performance characteristics make it a suitable component for power management, motor control, and switching power supply designs across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2335 pF @ 16 V |
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