IRF7811AVPBF
MOSFET N-CH 30V 10.8A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7811AVPBF is an N-channel power MOSFET designed for efficient switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.8A at 25°C. With a low on-resistance (Rds On) of 14mOhm at 15A and 4.5V gate-source voltage, it minimizes conduction losses. The IRF7811AVPBF offers a gate charge (Qg) of 26 nC maximum at 5V and an input capacitance (Ciss) of 1801 pF maximum at 10V. It supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 3V maximum at 250µA. Packaged in an 8-SOIC surface-mount case, this MOSFET has a maximum power dissipation of 2.5W. It operates across an extended temperature range of -55°C to 150°C. Applications include automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1801 pF @ 10 V |
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