IRF7811ATRPBF
MOSFET N-CH 28V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7811ATRPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 28V drain-source voltage and a continuous drain current of 11A at 25°C ambient. With a low on-resistance of 10mOhm at 11A and 10Vgs, it offers efficient power switching. The device is housed in an 8-SOIC package for surface mounting and supports a maximum power dissipation of 2.5W. Key parameters include a gate charge of 26 nC at 4.5V and an input capacitance of 1760 pF at 15V. Its operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power management, industrial control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 15 V |
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