IRF7811APBF
MOSFET N-CH 28V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7811APBF is a N-Channel Power MOSFET designed for efficient power management. This component features a drain-to-source voltage (Vdss) of 28V and a continuous drain current (Id) of 11A at 25°C. With a low on-resistance (Rds On) of 10mOhm at 11A and 10V, it minimizes conduction losses. The gate charge (Qg) is 26 nC maximum at 4.5V, facilitating fast switching speeds. Input capacitance (Ciss) is rated at 1760 pF maximum at 15V. The device operates within a temperature range of -55°C to 150°C and is housed in an 8-SOIC package. Maximum power dissipation is 2.5W. This MOSFET is suitable for applications in automotive, industrial, and consumer electronics requiring high-performance switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 15 V |
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