IRF7811
MOSFET N-CH 28V 14A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7811 is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 28V and a continuous Drain Current (Id) rating of 14A at 25°C, with a maximum power dissipation of 3.5W. The low on-resistance of 11mOhm at 15A and 4.5V gate drive voltage, coupled with a gate charge (Qg) of 23 nC at 5V, ensures efficient switching performance. The IRF7811 is housed in an 8-SOIC surface-mount package, offering a compact solution for space-constrained designs. Its robust construction and electrical characteristics make it suitable for use in power management, automotive electronics, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 28 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 16 V |
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