IRF7809TR
MOSFET N-CH 30V 17.6A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7809TR is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 17.6A at 25°C, with a maximum power dissipation of 3.5W. The low on-resistance (Rds On) of 7.5mOhm at 15A and 4.5V gate drive voltage, coupled with a maximum gate charge (Qg) of 86nC at 5V, ensures minimal conduction and switching losses. It is housed in an 8-SOIC package, suitable for surface mount assembly. Operating temperature ranges from -55°C to 150°C. This device finds application in power management, industrial automation, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 16 V |
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