IRF7809PBF
MOSFET N-CH 28V 14.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7809PBF, offers a 28V drain-source voltage and a continuous drain current of 14.5A at 25°C. This surface-mount device in an 8-SOIC package features a low gate threshold voltage of 1V at 250µA and a maximum gate-source voltage of ±12V. Designed for efficient switching, it operates across a temperature range of -55°C to 150°C (TJ). Its robust construction and performance characteristics make it suitable for applications in automotive and industrial power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 28 V |
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