IRF7809AV
MOSFET N-CH 30V 13.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7809AV is an N-Channel Power MOSFET designed for efficient switching applications. This device features a continuous drain current capability of 13.3A (Ta) at 25°C and a drain-source voltage (Vdss) of 30V. The ultra-low on-resistance (Rds On) of 9mOhm is achieved at 15A and 4.5V Vgs, with a gate drive voltage requirement as low as 4.5V. Key parameters include a maximum gate charge (Qg) of 62 nC @ 5V and an input capacitance (Ciss) of 3780 pF @ 16V. The IRF7809AV is housed in an 8-SOIC package, facilitating surface mounting. It offers a maximum power dissipation of 2.5W (Ta) and operates across a wide temperature range of -55°C to 150°C (TJ). Typical applications include power management, automotive systems, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3780 pF @ 16 V |
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