IRF7809ATR
MOSFET N-CH 30V 14.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7809ATR is an N-Channel power MOSFET featuring a 30V drain-source breakdown voltage. This device offers a continuous drain current of 14.5A at 25°C with a maximum power dissipation of 2.5W. The low on-resistance of 8.5mOhm at 15A and 4.5V gate drive voltage, coupled with a gate charge of 75nC, makes it suitable for various power management applications. It is presented in an 8-SOIC surface-mount package and operates across a temperature range of -55°C to 150°C. Key parametric data includes an input capacitance (Ciss) of 7300pF at 16V and a maximum gate-source voltage (Vgs) of ±12V. This component is widely utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 16 V |
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