IRF7809A
MOSFET N-CH 30V 14.5A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF7809A, features a 30V drain-to-source voltage and a continuous drain current of 14.5A at 25°C. This surface mount device, housed in an 8-SOIC package, offers a low on-resistance of 8.5mOhm maximum at 15A and 4.5V gate drive. Key parameters include a typical gate charge of 75nC at 5V and an input capacitance of 7300pF at 16V. The maximum power dissipation is rated at 2.5W. This component is suitable for applications in automotive, industrial, and consumer electronics requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 15A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 16 V |
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