IRF7807ZTRPBF
MOSFET N-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7807ZTRPBF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 11A at 25°C. The device exhibits a low on-resistance of 13.8mOhm at 11A and 10V Vgs, ensuring minimal conduction losses. With a gate charge (Qg) of 11 nC at 4.5V and an input capacitance (Ciss) of 770 pF at 15V, it is suitable for high-frequency switching. The MOSFET is housed in an 8-SOIC (0.154", 3.90mm Width) package, surface mounted, and rated for a maximum power dissipation of 2.5W. Operating temperature range is from -55°C to 150°C. Applications include automotive, industrial, and consumer electronics power management. The part is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
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