IRF7807Z
MOSFET N-CH 30V 11A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7807Z is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C ambient temperature, with a maximum power dissipation of 2.5W. The IRF7807Z exhibits a low on-resistance of 13.8mOhm at 11A and 10V, and a gate charge of 11 nC at 4.5V. Its input capacitance (Ciss) is rated at a maximum of 770 pF at 15V. The MOSFET is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 150°C. Key drive voltages include 4.5V and 10V, with a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) maximum of 2.25V at 250µA. This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.8mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 15 V |
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