IRF7807VD2TRPBF
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series IRF7807VD2TRPBF is an N-Channel Power MOSFET designed for efficient switching in demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.3A at 25°C, with a maximum power dissipation of 2.5W. The low on-resistance of 25mOhm at 7A and 4.5V gate drive ensures minimal power loss. A key characteristic of the IRF7807VD2TRPBF is its integrated Schottky diode, providing enhanced performance and protection. Fabricated using advanced MOSFET technology, this component is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied on tape and reel for automated assembly. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
Request a Quote
Clients Also Buy
NTTD4401FR2
MOSFET P-CH 20V 2.4A MICRO8
NTMSD3P102R2
MOSFET P-CH 20V 2.34A 8SOIC
NTTD4401FR2G
MOSFET P-CH 20V 2.4A MICRO8
