Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IRF7807VD1TRPBF

Banner
productimage

IRF7807VD1TRPBF

MOSFET N-CH 30V 8.3A 8SO

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies FETKY™ N-Channel MOSFET IRF7807VD1TRPBF. This 30V device features a low Rds(on) of 25mOhm at 7A and 4.5V Vgs, with a continuous drain current of 8.3A at 25°C. The N-Channel MOSFET is integrated with a Schottky diode, offering enhanced performance characteristics. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5W. The device is packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on tape and reel. Its specifications make it suitable for applications in power management, consumer electronics, and automotive systems.

Additional Information

Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154"", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.3A (Ta)
Rds On (Max) @ Id, Vgs25mOhm @ 7A, 4.5V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)2.5W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device Package8-SO
Drive Voltage (Max Rds On, Min Rds On)4.5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
NTTD4401FR2

MOSFET P-CH 20V 2.4A MICRO8

product image
NTMSD3P102R2

MOSFET P-CH 20V 2.34A 8SOIC

product image
NTTD4401FR2G

MOSFET P-CH 20V 2.4A MICRO8