IRF7807VD1PBF
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ series N-Channel MOSFET, part number IRF7807VD1PBF, offers a 30V drain-source voltage and 8.3A continuous drain current at 25°C. This surface mount device in an 8-SOIC package features a low on-resistance of 25mOhm at 7A and 4.5V Vgs. The integrated Schottky diode provides isolation, enhancing performance in demanding applications. With a maximum power dissipation of 2.5W and a gate charge of 14nC at 4.5V Vgs, this MOSFET is suitable for power management solutions in industrial, automotive, and consumer electronics sectors. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
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