IRF7807PBF
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7807PBF is an N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 30 V. This device features a continuous drain current (Id) of 8.3A at 25°C and a maximum power dissipation of 2.5W (Tc). The Rds On is specified at a maximum of 25mOhm at 7A and 4.5V gate drive. Key parameters include a Gate Charge (Qg) of 17 nC at 5V and a threshold voltage (Vgs(th)) of 1V at 250µA. The MOSFET is housed in an 8-SOIC package suitable for surface mounting. This component is utilized in applications such as power switching and battery management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
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