IRF7807D2TR
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF7807D2TR is an N-Channel Power MOSFET from the FETKY™ series. This device features a 30V Drain-Source Voltage (Vdss) and supports a continuous drain current of 8.3A (Ta) at 25°C. The Rds On is specified at a maximum of 25mOhms at 7A and 4.5V Vgs. Integrated within this component is a Schottky diode, providing enhanced switching performance. The device offers a maximum power dissipation of 2.5W (Tc). Mounting is via surface mount, with the component housed in an 8-SOIC package. Applications include automotive and industrial power management systems.
Additional Information
Series: FETKY™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
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