IRF7807D1PBF
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies FETKY™ N-Channel MOSFET, part number IRF7807D1PBF, is a 30V device designed for efficient power switching. This MOSFET features a low on-resistance of 25mOhm at 7A and 4.5V Vgs, coupled with a Schottky diode integrated within the package for reduced switching losses. The device offers a continuous drain current of 8.3A (Ta) with a maximum power dissipation of 2.5W (Ta). Its 8-SOIC package facilitates surface mounting, and it operates across a temperature range of -55°C to 150°C. Key parameters include a gate charge of 17nC (max) at 5V and a gate-source voltage (Vgs) tolerance up to ±12V. This component is suitable for applications in power management, automotive systems, and industrial controls requiring high-frequency switching and reduced parasitic effects.
Additional Information
Series: FETKY™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
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