IRF7807ATR
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7807ATR is a surface-mount N-Channel MOSFET designed for power switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 8.3 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 25 mOhm at 7 A and 4.5 V gate-source voltage. With a gate charge (Qg) of 17 nC at 5 V, it offers efficient switching characteristics. The device operates across a temperature range of -55°C to 150°C and has a maximum power dissipation of 2.5 W. Packaged in an 8-SOIC (0.154" width) and supplied on tape and reel, the IRF7807ATR is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
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