IRF7807APBF
MOSFET N-CH 30V 8.3A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7807APBF is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 8.3A at 25°C ambient. The low on-resistance of 25mOhm is specified at 7A drain current and 4.5V gate-source voltage. With a maximum power dissipation of 2.5W in a surface mount package, it is suitable for high-density board designs. Key parameters include a gate charge of 17nC maximum at 5V gate-source voltage and a threshold voltage of 1V maximum at 250µA. The operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, automotive electronics, and industrial control systems. The component is supplied in an 8-SOIC (0.154", 3.90mm Width) package.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 5 V |
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