IRF7805ZTRPBF-1
MOSFET N-CH 30V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7805ZTRPBF-1 is a 30V N-Channel power MOSFET designed for efficient power switching applications. This device features a low on-resistance of 6.8mOhm at 16A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current capability of 16A (Ta) and a maximum power dissipation of 2.5W (Ta), it is suitable for demanding thermal environments. The gate charge (Qg) is 27 nC at 4.5V, facilitating fast switching speeds. Input capacitance (Ciss) is 2080 pF at 15V Vds. The MOSFET operates across a temperature range of -55°C to 150°C (TJ) and is provided in a surface-mount 8-SOIC package, supplied on tape and reel. This component finds application in automotive, industrial, and consumer electronics requiring robust power management solutions.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 15 V |
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