IRF7805ZGTRPBF
MOSFET N-CH 30V 16A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7805ZGTRPBF is a 30V N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a low on-resistance of 6.8mOhm at 16A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 16A (Ta) and a maximum power dissipation of 2.5W (Ta), it is suitable for demanding power management tasks. The device offers a low gate charge of 27 nC at 4.5V and an input capacitance of 2080 pF at 15V, contributing to efficient switching speeds. Packaged in an 8-SOIC (0.154", 3.90mm Width) case, it utilizes surface mount technology for streamlined PCB integration. This MOSFET is commonly employed in automotive, industrial, and consumer electronics power supply designs where thermal management and robust performance are critical. It operates across a wide temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage tolerance of ±20V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2080 pF @ 15 V |
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