IRF7805ATRPBF
MOSFET N-CH 30V 13A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF7805ATRPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 13A at 25°C. The low on-resistance (Rds On) of 11mOhm at 7A and 4.5V gate drive, coupled with a maximum power dissipation of 2.5W (Ta), makes it suitable for efficient power switching. The MOSFET is packaged in an 8-SOIC (0.154", 3.90mm Width) for surface mounting, supplied on tape and reel. Key parameters include a gate charge (Qg) of 31nC at 5V and a threshold voltage (Vgs(th)) of 3V at 250µA. This device is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 5 V |
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