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IRF7799L2TRPBF

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IRF7799L2TRPBF

MOSFET N-CH 250V 375A DIRECTFET

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies HEXFET® IRF7799L2TRPBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain current (Id) of 35A at 25°C case temperature. The Rds(on) is specified at a maximum of 38mOhm at 21A and 10V Vgs. With a gate charge (Qg) of 165 nC at 10V, it offers efficient switching characteristics. The device has a maximum power dissipation of 125W at 25°C case temperature and 4.3W at 25°C ambient temperature. Operating across a junction temperature range of -55°C to 175°C, it is housed in a DirectFET™ Isometric L8 package for surface mounting. This MOSFET is suitable for use in demanding power conversion systems, electric vehicle powertrains, industrial motor control, and renewable energy applications.

Additional Information

Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDirectFET™ Isometric L8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs38mOhm @ 21A, 10V
FET Feature-
Power Dissipation (Max)4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageDirectFET™ Isometric L8
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6714 pF @ 25 V

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