IRF7799L2TR1PBF
MOSFET N-CH 250V 375A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7799L2TR1PBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 250V Drain-Source Voltage (Vdss) and a continuous drain current capability of 375A at 25°C (Tc). The DirectFET™ Isometric L8 package facilitates efficient thermal management, offering a maximum power dissipation of 125W (Tc). Key electrical characteristics include a maximum Rds(on) of 38mOhm at 21A and 10V Vgs, and a gate charge (Qg) of 165 nC at 10V. Input capacitance (Ciss) is specified at 6714 pF maximum at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in Tape & Reel packaging. This MOSFET is suitable for high-power switching applications across various industrial sectors, including electric vehicle powertrains, industrial power supplies, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 165 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6714 pF @ 25 V |
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