IRF7780MTRPBF
MOSFET N-CH 75V 89A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ IRF7780MTRPBF is an N-Channel Power MOSFET designed for high-efficiency power conversion. This DirectFET™ Isometric ME package device features a 75 V drain-source voltage (Vdss) and a continuous drain current (Id) of 89 A at 25°C (Tc). The low on-resistance of 5.7 mOhm at 53 A and 10 V (Vgs) minimizes conduction losses. With a maximum power dissipation of 96 W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 186 nC at 10 V and input capacitance (Ciss) of 6504 pF at 25 V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric ME |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 89A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 53A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 150µA |
| Supplier Device Package | DirectFET™ Isometric ME |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 186 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6504 pF @ 25 V |
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