IRF7779L2TR1PBF
MOSFET N-CH 150V 375A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF7779L2TR1PBF, is a DirectFET™ Isometric L8 packaged device designed for high-power applications. This component features a Drain-to-Source Voltage (Vdss) of 150 V and a continuous drain current (Id) of 375 A at 25°C (Tc). The Rds On is specified at a maximum of 11 mOhm at 40 A and 10 V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 150 nC at 10 V and an input capacitance (Ciss) of 6660 pF at 25 V. Power dissipation is rated at 3.3 W (Ta) and 125 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding industrial and automotive power systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
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