IRF7769L2TRPBF
MOSFET N-CH 100V 375A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7769L2TRPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 375A at 25°C (Tc). The device offers a low on-resistance of 3.5mOhm maximum at 74A and 10V Vgs, facilitating efficient power transfer. It utilizes the DirectFET™ Isometric L8 package for optimized thermal performance and ease of surface mounting, with maximum power dissipation rated at 125W (Tc). Key parameters include a gate charge of 300nC (max) at 10V Vgs and input capacitance of 11560pF (max) at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for demanding applications in automotive and industrial power systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 74A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11560 pF @ 25 V |
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