IRF7759L2TRPBF
MOSFET N-CH 75V 26A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF7759L2TRPBF, features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 26A at 25°C ambient, with a pulsed current capability of 375A at 25°C case. This DirectFET™ Isometric L8 packaged device offers a low on-resistance (Rds On) of 2.3mOhm at 96A and 10V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) up to 12222 pF at 25V. With a power dissipation of 3.3W (Ta) and 125W (Tc), this component is suitable for demanding applications in automotive, industrial power control, and server power supply sectors. It operates within a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V |
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