IRF7759L2TR1PBF
MOSFET N-CH 75V 26A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRF7759L2TR1PBF, offers a 75V drain-source breakdown voltage and a continuous drain current rating of 26A at 25°C ambient, scaling to 375A continuous at 25°C case temperature. This DirectFET™ Isometric L8 packaged device features a low on-resistance of 2.3mOhm maximum at 96A and 10V gate drive. With a maximum gate charge of 300nC at 10V and input capacitance of 12222pF at 25V, it is designed for efficient switching applications. The device supports a maximum gate-source voltage of ±20V and operates across a temperature range of -55°C to 175°C. Power dissipation is rated at 3.3W ambient and 125W at the case. This component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12222 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
