IRF7749L2TRPBF
MOSFET N-CH 60V 33A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7749L2TRPBF is an N-Channel MOSFET designed for high-performance applications. This DirectFET™ Isometric L8 packaged component offers a drain-source voltage (Vdss) of 60V. It features a continuous drain current (Id) of 33A at 25°C ambient and 375A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 1.5mOhm maximum at 120A and 10V gate-source voltage. Maximum power dissipation is rated at 3.3W (Ta) and 125W (Tc). With a gate charge (Qg) of 300 nC maximum at 10V, it is suitable for power switching and motor control applications across automotive and industrial sectors. The operating temperature range is -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 120A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12320 pF @ 25 V |
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