IRF7749L2TR1PBF
MOSFET N-CH 60V 33A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7749L2TR1PBF is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 33A at 25°C (Ta), with a significantly higher 375A at 25°C (Tc). The low on-resistance (Rds On) of 1.5 mOhm at 120A and 10V drive voltage, coupled with a maximum power dissipation of 125W (Tc), makes it suitable for demanding power conversion tasks. The DirectFET™ Isometric L8 package offers excellent thermal performance for surface mount applications. Key electrical characteristics include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 12320 pF at 25V. This MOSFET is utilized in industries such as automotive and industrial power systems. It operates across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 120A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12320 pF @ 25 V |
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