IRF7748L1TRPBF
MOSFET N-CH 60V 28A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies MOSFET N-Channel, part number IRF7748L1TRPBF, is a high-performance power MOSFET designed for demanding applications. This device features a 60V drain-source voltage and a continuous drain current capability of 28A at ambient temperature and 148A at case temperature. The low on-resistance of 2.2mOhm at 89A and 10V gate drive voltage, combined with a maximum gate charge of 220 nC, ensures efficient power switching. With a maximum power dissipation of 3.3W (Ta) and 94W (Tc), this MOSFET is suitable for high-power density designs. It utilizes MOSFET technology and is housed in a DirectFET™ Isometric L6 surface mount package, supplied on tape and reel. The operating temperature range is -55°C to 175°C. This component finds application in automotive and industrial power systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta), 148A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 89A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 94W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DIRECTFET L6 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8075 pF @ 50 V |
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