IRF7739L2TR1PBF
MOSFET N-CH 40V 46A DIRECTFETManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7739L2TR1PBF is an N-Channel MOSFET designed for demanding power applications. This DirectFET™ Isometric L8 packaged device features a 40V drain-source voltage and a continuous drain current capability of 46A at ambient temperature and 375A at case temperature. With a low on-resistance of 1mOhm at 160A and 10V gate-source voltage, it minimizes conduction losses. The device exhibits a maximum gate charge of 330 nC at 10V and an input capacitance of 11880 pF at 25V. It supports a maximum junction temperature of 175°C and offers a maximum power dissipation of 3.8W at ambient and 125W at case temperature. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DirectFET™ Isometric L8 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 375A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DirectFET™ Isometric L8 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11880 pF @ 25 V |
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