IRF7726TRPBF
MOSFET P-CH 30V 7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7726TRPBF, is a 30V device in a Micro8™ package. This surface mount component offers a continuous drain current of 7A at 25°C ambient temperature, with a maximum power dissipation of 1.79W. Key parameters include a low on-resistance of 26mOhm at 7A and 10V, and a gate charge of 69nC at 10V. Input capacitance (Ciss) is specified at 2204pF maximum at 25V. This MOSFET is designed for applications requiring efficient switching and power control in the automotive and industrial sectors. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2204 pF @ 25 V |
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