IRF7726TR
MOSFET P-CH 30V 7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7726TR, offers a 30V drain-source breakdown voltage and a continuous drain current of 7A at 25°C. This surface mount device, packaged in an 8-TSSOP/8-MSOP Micro8™ configuration, features a maximum on-resistance of 26mOhm at 7A and 10V Vgs. With a gate charge of 69nC at 10V and an input capacitance of 2204pF at 25V, the IRF7726TR is suitable for applications requiring efficient power switching. Its power dissipation is rated at 1.79W, and it operates across an extended temperature range of -55°C to 150°C. This component finds utility in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2204 pF @ 25 V |
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