IRF7726
MOSFET P-CH 30V 7A MICRO8Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7726, is a 30V device designed for surface mount applications. This MOSFET features a continuous drain current (Id) of 7A at 25°C and a maximum power dissipation of 1.79W (Ta). The Rds On is specified at 26mOhm maximum at 7A and 10V Vgs. Key electrical parameters include a gate charge (Qg) of 69 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2204 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C. The device utilizes MOSFET technology and is supplied in a Micro8™ package, specifically an 8-TSSOP or 8-MSOP with a 3.00mm width. This component is commonly found in automotive and industrial power management applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP, 8-MSOP (0.118"", 3.00mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.79W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | Micro8™ |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2204 pF @ 25 V |