IRF7707TRPBF
MOSFET P-CH 20V 7A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-channel power MOSFET, part number IRF7707TRPBF, offers a 20V drain-source voltage and 7A continuous drain current capability at 25°C. This device features a maximum on-resistance of 22mOhm at 7A and 4.5V Vgs, with a gate charge of 47nC at 4.5V. Designed for surface mounting in an 8-TSSOP package, the IRF7707TRPBF supports drive voltages from 2.5V to 4.5V and operates across a temperature range of -55°C to 150°C. The component is delivered on tape and reel. This MOSFET is suitable for power management applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2361 pF @ 15 V |