IRF7706
MOSFET P-CH 30V 7A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7706, offers a 30 V drain-to-source voltage capability and a continuous drain current of 7 A at 25°C (Ta). This device features a low on-resistance of 22 mOhm maximum at 7 A and 10 V Vgs, with a gate charge of 72 nC at 10 V. The input capacitance (Ciss) is specified at 2211 pF maximum at 25 V. Designed for surface mounting within an 8-TSSOP package, it has a maximum power dissipation of 1.51 W (Ta) and operates across a temperature range of -55°C to 150°C. The IRF7706 is utilized in applications such as power management and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.51W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2211 pF @ 25 V |
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