IRF7705TR
MOSFET P-CH 30V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, Part Number IRF7705TR, offers a 30V drain-to-source voltage and 8A continuous drain current at 25°C (Tc). This surface mount component features a maximum on-resistance of 18mOhm at 8A and 10V Vgs. With a gate charge of 88 nC at 10V and input capacitance of 2774 pF at 25V, it is designed for efficient switching applications. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in an 8-TSSOP package on tape and reel. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 25 V |
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