IRF7705GTRPBF
MOSFET P-CH 30V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7705GTRPBF, is a surface-mount device in an 8-TSSOP package. This component offers a 30V drain-source breakdown voltage and a continuous drain current capability of 8A at 25°C (Ta). The Rds(On) is specified at a maximum of 18mOhm when driven at 10V Vgs and drawing 8A. Key parameters include a typical gate charge of 88 nC at 10V Vgs and an input capacitance of 2774 pF (max) at 25V Vds. The device supports gate-source voltages up to ±20V and has a threshold voltage of 2.5V (max) at 250µA. With a maximum power dissipation of 1.5W (Ta) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications in automotive and industrial sectors. The component is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 25 V |
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