IRF7705
MOSFET P-CH 30V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7705, is a surface-mount component designed for power management applications. This device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 8A at 25°C. The IRF7705 exhibits a low on-resistance (Rds On) of 18mOhm maximum at 8A, 10V, and a maximum power dissipation of 1.5W (Tc). Key parameters include a gate charge (Qg) of 88 nC maximum at 10V and input capacitance (Ciss) of 2774 pF maximum at 25V. It operates across a temperature range of -55°C to 150°C. The component is housed in an 8-TSSOP package. This MOSFET is utilized in various industrial sectors, including automotive and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 25 V |
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