IRF7704TRPBF
MOSFET P-CH 40V 4.6A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7704TRPBF is a P-Channel Power MOSFET designed for efficient power management applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 4.6A at 25°C. With a low on-resistance of 46mOhm maximum at 4.6A and 10V Vgs, it ensures minimal conduction losses. The device is packaged in an 8-TSSOP for surface mounting, offering a compact footprint. Key electrical parameters include a gate charge of 38 nC maximum at 4.5V Vgs and an input capacitance of 3150 pF maximum at 25V Vds. The operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics where efficient switching and power control are critical.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3150 pF @ 25 V |