IRF7703TR
MOSFET P-CH 40V 6A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF7703TR is a P-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 6A at 25°C. The device exhibits a low on-resistance of 28mOhm maximum at 6A and 10V Vgs, optimized for efficient power switching. With a gate charge of 62nC at 4.5V, it facilitates fast switching speeds. The MOSFET is housed in an 8-TSSOP package, suitable for surface mounting, and offers a maximum power dissipation of 1.5W. Its operating temperature range is -55°C to 150°C. This component finds application in various industries, including automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5220 pF @ 25 V |
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