IRF7703
MOSFET P-CH 40V 6A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, IRF7703. This device features a 40V drain-source voltage and a continuous drain current of 6A at 25°C, with a maximum power dissipation of 1.5W in the same conditions. The IRF7703 is presented in an 8-TSSOP package for surface mounting, offering a low on-resistance of 28mOhm at 6A and 10V Vgs. Key parameters include a gate charge of 62 nC at 4.5V and an input capacitance of 5220 pF at 25V. The operating temperature range is -55°C to 150°C. This component finds application in power management and switching solutions across various industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5220 pF @ 25 V |
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