IRF7702TRPBF
MOSFET P-CH 12V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7702TRPBF, offers a 12V drain-source voltage with a continuous drain current of 8A at 25°C (Tc). This device features a low on-resistance of 14mOhm maximum at 8A, 4.5V Vgs, and a maximum power dissipation of 1.5W (Tc). The gate charge is 81nC maximum at 4.5V Vgs, with input capacitance (Ciss) up to 3470pF at 10V Vds. Designed for surface mounting in an 8-TSSOP package, the IRF7702TRPBF operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 10 V |