IRF7702TR
MOSFET P-CH 12V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7702TR, offers a 12V drain-source voltage and continuous drain current capability of 8A at 25°C. This surface mount device in an 8-TSSOP package features a low on-resistance of 14mOhm at 8A and 4.5V Vgs. The gate charge (Qg) is 81 nC maximum at 4.5V, and input capacitance (Ciss) is 3470 pF maximum at 10V. Designed for efficient power management, it dissipates a maximum of 1.5W at 25°C. Operating temperature range is -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 10 V |
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