IRF7702
MOSFET P-CH 12V 8A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7702. This device features a 12V drain-source breakdown voltage (Vdss) and supports a continuous drain current of 8A at 25°C (Tc). The IRF7702 exhibits a low on-resistance (Rds On) of 14mOhm maximum at 8A and 4.5V, with a gate threshold voltage (Vgs(th)) of 1.2V maximum at 250µA. Designed for surface mounting, it is housed in an 8-TSSOP package, measuring 4.40mm in width. Key electrical characteristics include a maximum gate charge (Qg) of 81 nC at 4.5V and input capacitance (Ciss) of 3470 pF maximum at 10V. The operational temperature range is from -55°C to 150°C (TJ). This component finds application in industries such as automotive and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3470 pF @ 10 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
