IRF7701TRPBF
MOSFET P-CH 12V 10A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-channel MOSFET, part number IRF7701TRPBF, offers a 12V drain-source breakdown voltage and a continuous drain current capability of 10A at 25°C ambient. This surface mount device, packaged in an 8-TSSOP, features a low on-resistance of 11mOhm maximum at 10A and 4.5V Vgs. The gate charge is specified at a maximum of 100 nC at 4.5V, with a threshold voltage of 1.2V at 250µA. Suitable for applications requiring efficient power switching, this MOSFET operates across a temperature range of -55°C to 150°C. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5050 pF @ 10 V |