IRF7700TRPBF
MOSFET P-CH 20V 8.6A 8TSSOPManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® P-Channel MOSFET, part number IRF7700TRPBF, offers a 20V Drain-Source Voltage (Vdss) and a continuous drain current of 8.6A (Tc) at 25°C. This surface mount device in an 8-TSSOP package features a low on-resistance of 15mOhm at 8.6A and 4.5V. With a maximum power dissipation of 1.5W (Tc), it is suitable for applications requiring efficient power switching. Key electrical parameters include a gate charge (Qg) of 89nC at 5V and input capacitance (Ciss) of 4300pF at 15V. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in automotive and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 8-TSSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 15 V |